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| OM60N06SA OM60N05SA OM50N06ST OM50N06SA OM50N05SA OM50N05ST LOW VOLTAGE, LOW RDS(on) POWER MOSFETS IN HERMETIC ISOLATED PACKAGE 50V And 60V Ultra Low RDS(on) Power MOSFETs In TO-257 And TO-254 Isolated Packages FEATURES * * * * * Isolated Hermetic Metal Packages Ultra Low RDS(on) Low Conductive Loss/Low Gate Charge Available Screened To MIL-S-19500, TX, TXV And S Levels Ceramic Feedthroughs Available DESCRIPTION This series of hermetic packaged MOSFETs are ideally suited for low voltage applications; battery powered voltage power supplies, motor controls, dc to dc converters and synchronous rectification. The low conduction loss allows smaller heat sinking and the low gate charge simpler drive circuitry. MAXIMUM RATINGS (Per Device) PART NO. OM60N06SA OM50N06SA OM50N06ST OM60N05SA OM50N05SA OM50N05ST VDS (V) 60 60 60 50 50 50 RDS(on) ( ) .025 .030 .035 .025 .030 .035 ID (A) 60 50 50 60 50 50 Package TO-254AA TO-254AA TO-257AA TO-254AA TO-254AA TO-257AA 3.1 SCHEMATIC Drain T-3 PIN CONNECTION M-PAK PIN CONNECTION 1 23 Gate 1 2 3 Source Pin 1: Drain Pin 2: Source Pin 3: Gate Pin 1: Drain Pin 2: Source Pin 3: Gate 4 11 R1 Supersedes 3 02 R0 3.1 - 65 OM60N06SA - OM50N05ST ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted) Parameter VDS VDGR VGS ID @ TC = 25C ID @ TC = 100C IDM PD @ TC = 25C PD @ TC = 100C Junction-To-Case TJ Tstg Drain-Source Voltage Drain-Gate Voltage (RGS = 1 M ) Gate-Source Voltage, Continuous Continuous Drain Current2 60N06SA 60 60 +20 55 37 220 100 40 .80 -55 to 150 Storage Temperature Range 300 300 300 300 C 50N06ST 50N05SA 60 60 +20 50 33 200 100 40 .80 -55 to 150 60N05SA 50 50 +20 55 37 220 100 40 .80 50N05ST 50N05SA 50 50 +20 50 33 200 100 40 .80 Units V V V A A A W W W/C C Continuous Drain Current2 Pulsed Drain Current1 Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor1 Operating and -55 to 150 -55 to 150 Lead Temperature (1/16" from case for 10 secs.) 1 Pulse Test: Pulse width 300 sec. Duty Cycle 1.5%. 2 Package Limited SA ID = 25 A, SC SC I D = 35 A @ 25 C THERMAL RESISTANCE RthJC Junction-to-Case 1.25 C/W PACKAGE LIMITATIONS Parameters ID Continuous Drain Current Linear Derating Factor, Junction-to-Ambient RthJA Thermal Resistance, Junction-to-Ambient (Free Air Operation) Linear Derating, Junction-to-Case TO254AA 25 .020 50 0.8 TO-257AA 15 .015 65 0.8 Unit A W/C C/W W/C 3.1 T-3 MECHANICAL OUTLINE M-PAK MECHANICAL OUTLINE PACKAGE OPTIONS MOD PAK Z-TAB Notes: * Standard Products are supplied with glass feedthroughs. For ceramic feedthroughs, add the letter "C" to the part number. Example - OMXXXXCSA. * MOSFETs are also available in Z-Pak, dual and quad pak styles. Please call the factory for more information. 6 PIN SIP 3.1 - 66 OM60N06SA - OM50N05ST 3.1 3.1 - 67 OM60N06SA - OM50N05ST 3.1 3.1 - 68 OM60N06SA - OM50N05ST 3.1 3.1 - 69 OM60N06SA - OM50N05ST Switching Times Test Circuits For Resistive Load Test Circuit For Inductive Load Switching And Diode Reverse Recovery Time TYPICAL CHARACTERISTICS Gate Charge vs Gate-Source Voltage Capacitance Variations 3.1 Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature |
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